SIR874DP-T1-GE3
SIR874DP-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 25V 20A PPAK SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
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Technische Details SIR874DP-T1-GE3
Description: MOSFET N-CH 25V 20A PPAK SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 29.8W, Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 25V, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: PowerPAK® SO-8.