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SIR882DP-T1-GE3

SIR882DP-T1-GE3 Vishay Semiconductors


sir882dp.pdf Hersteller: Vishay Semiconductors
MOSFET 100 Volts 60 Amps 83 Watts
auf Bestellung 20600 Stücke:

Lieferzeit 672-686 Tag (e)
Anzahl Preis ohne MwSt
9+5.8 EUR
11+ 4.84 EUR
100+ 3.85 EUR
250+ 3.56 EUR
500+ 3.22 EUR
1000+ 2.78 EUR
6000+ 2.73 EUR
Mindestbestellmenge: 9
Produktrezensionen
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Technische Details SIR882DP-T1-GE3 Vishay Semiconductors

Description: MOSFET N-CH 100V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V, Power Dissipation (Max): 5.4W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 50 V.

Weitere Produktangebote SIR882DP-T1-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIR882DP-T1-GE3 SIR882DP-T1-GE3 Hersteller : Vishay sir882dp.pdf Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R
Produkt ist nicht verfügbar
SIR882DP-T1-GE3 Hersteller : VISHAY sir882dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIR882DP-T1-GE3 SIR882DP-T1-GE3 Hersteller : Vishay Siliconix sir882dp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 50 V
Produkt ist nicht verfügbar
SIR882DP-T1-GE3 SIR882DP-T1-GE3 Hersteller : Vishay Siliconix sir882dp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 50 V
Produkt ist nicht verfügbar
SIR882DP-T1-GE3 Hersteller : VISHAY sir882dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A; 83W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 80A
Power dissipation: 83W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar