SIRA06DP-T1-GE3

SIRA06DP-T1-GE3

SIRA06DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

sira06dp.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 167 Stücke
Lieferzeit 21-28 Tag (e)

9+ 3.12 EUR
10+ 2.81 EUR
100+ 2.19 EUR

Technische Details SIRA06DP-T1-GE3

Description: MOSFET N-CH 30V 40A PPAK SO-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V.

Preis SIRA06DP-T1-GE3 ab 2.19 EUR bis 3.12 EUR

SIRA06DP-T1-GE3
SIRA06DP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
VISH_S_A0000149484_1-2566647.pdf
auf Bestellung 3616 Stücke
Lieferzeit 14-28 Tag (e)
SIRA06DP-T1-GE3
SIRA06DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Power - Max: 62.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
sira06dp.pdf
auf Bestellung 2108 Stücke
Lieferzeit 21-28 Tag (e)
SIRA06DP-T1-GE3
SIRA06DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
sira06dp.pdf
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