SIRA06DP-T1-GE3
SIRA06DP-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 40A PPAK SO-8
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 167 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 167 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details SIRA06DP-T1-GE3
Description: MOSFET N-CH 30V 40A PPAK SO-8, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V.
Preis SIRA06DP-T1-GE3 ab 2.19 EUR bis 3.12 EUR
 Hersteller: Vishay Semiconductors MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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auf Bestellung 3616 Stücke Lieferzeit 14-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Power - Max: 62.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8
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auf Bestellung 2108 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V
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