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SIRA24DP-T1-GE3

SIRA24DP-T1-GE3 Vishay Siliconix

sira24dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.83 EUR
6000+ 0.79 EUR
Mindestbestellmenge: 3000
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Technische Details SIRA24DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 25V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V.

Weitere Produktangebote SIRA24DP-T1-GE3 nach Preis ab 0.86 EUR bis 2.03 EUR

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SIRA24DP-T1-GE3 SIRA24DP-T1-GE3 Hersteller : Vishay Siliconix sira24dp.pdf Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
auf Bestellung 11301 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2 EUR
16+ 1.63 EUR
100+ 1.27 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
Mindestbestellmenge: 13
SIRA24DP-T1-GE3 SIRA24DP-T1-GE3 Hersteller : Vishay / Siliconix sira24dp.pdf MOSFET 25V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 63936 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.03 EUR
32+ 1.67 EUR
100+ 1.29 EUR
500+ 1.1 EUR
1000+ 0.89 EUR
3000+ 0.86 EUR
Mindestbestellmenge: 26
SIRA24DP-T1-GE3 Hersteller : VISHAY sira24dp.pdf SIRA24DP-T1-GE3 SMD N channel transistors
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