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SIRA28BDP-T1-GE3

SIRA28BDP-T1-GE3 Vishay Siliconix


sira28bdp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A/38A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.53 EUR
Mindestbestellmenge: 3000
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Technische Details SIRA28BDP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 18A/38A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.8W (Ta), 17W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 15 V.

Weitere Produktangebote SIRA28BDP-T1-GE3 nach Preis ab 0.58 EUR bis 3.01 EUR

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SIRA28BDP-T1-GE3 SIRA28BDP-T1-GE3 Hersteller : Vishay Siliconix sira28bdp.pdf Description: MOSFET N-CH 30V 18A/38A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 17W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 15 V
auf Bestellung 6549 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.48 EUR
21+ 1.27 EUR
100+ 0.95 EUR
500+ 0.75 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 18
SIRA28BDP-T1-GE3 Hersteller : Vishay sira28bdp.pdf MOSFET N-CH 30V POWERPAK SO-8 SIRA28BDP-T1-GE3 Vishay Siliconix TSIRA28bdp
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+3.01 EUR
Mindestbestellmenge: 10
SIRA28BDP-T1-GE3 Hersteller : VISHAY sira28bdp.pdf SIRA28BDP-T1-GE3 SMD N channel transistors
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SIRA28BDP-T1-GE3 SIRA28BDP-T1-GE3 Hersteller : Vishay / Siliconix sira28bdp-1766462.pdf MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
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