SIRA50DP-T1-RE3 Vishay / Siliconix
auf Bestellung 815 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.85 EUR |
| 17+ | 3.2 EUR |
| 100+ | 2.54 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 2.13 EUR |
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Technische Details SIRA50DP-T1-RE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 62.5A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V.
Weitere Produktangebote SIRA50DP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIRA50DP-T1-RE3 | Hersteller : VISHAY |
 Description: VISHAY - SIRA50DP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 860 µohm, PowerPAK SO, OberflächenmontageTransistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 100 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 100 Gate-Source-Schwellenspannung, max.: 2.2 Verlustleistung: 100 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: TrenchFET Gen IV Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 860 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 860 SVHC: Lead (19-Jan-2021) |
auf Bestellung 3218 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIRA50DP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Kind of package: reel; tape Mounting: SMD Drain current: 100A On-state resistance: 1.45mΩ Type of transistor: N-MOSFET Power dissipation: 64W Gate charge: 194nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 400A Polarisation: unipolar Case: PowerPAK® SO8 Drain-source voltage: 40V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIRA50DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 62.5A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V |
Produkt ist nicht verfügbar |
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SIRA50DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 62.5A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V |
Produkt ist nicht verfügbar |
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| SIRA50DP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Kind of package: reel; tape Mounting: SMD Drain current: 100A On-state resistance: 1.45mΩ Type of transistor: N-MOSFET Power dissipation: 64W Gate charge: 194nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: -16...20V Pulsed drain current: 400A Polarisation: unipolar Case: PowerPAK® SO8 Drain-source voltage: 40V |
Produkt ist nicht verfügbar |