SIRA52ADP-T1-RE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 41.6A/131A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V
auf Bestellung 380 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 3.74 EUR |
| 10+ | 3.34 EUR |
| 100+ | 2.6 EUR |
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Technische Details SIRA52ADP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/131A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc), Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V.
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| SIRA52ADP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 105A Pulsed drain current: 200A Power dissipation: 30.7W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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SIRA52ADP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 41.6A/131A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc) Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V |
Produkt ist nicht verfügbar |
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| SIRA52ADP-T1-RE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 105A Pulsed drain current: 200A Power dissipation: 30.7W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |