SIRA58ADP-T1-RE3

SIRA58ADP-T1-RE3

SIRA58ADP-T1-RE3

Hersteller: Vishay Semiconductors
MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8
VISH_S_A0006502532_1-2569670.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3835 Stücke
Lieferzeit 14-28 Tag (e)
18+ 2.94 EUR
20+ 2.65 EUR
100+ 2.06 EUR
500+ 1.7 EUR

Technische Details SIRA58ADP-T1-RE3

Description: MOSFET N-CH 40V 32.3A/109A PPAK, Base Part Number: SIRA58, Package / Case: PowerPAK® SO-8, Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 56.8W (Tc), Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Cut Tape (CT), Manufacturer: Vishay Siliconix.

Preis SIRA58ADP-T1-RE3 ab 1.7 EUR bis 2.94 EUR

SIRA58ADP-T1-RE3
SIRA58ADP-T1-RE3
Hersteller: VISHAY
Description: VISHAY - SIRA58ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 40 V, 109 A, 0.0022 ohm, PowerPAK SO, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 109
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 56.8
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8
Produktpalette: TrenchFET Gen IV
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0022
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2.4
SVHC: Lead (19-Jan-2021)
sira58adp.pdf
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SIRA58ADP-T1-RE3
SIRA58ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32.3A/109A PPAK
Base Part Number: SIRA58
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
sira58adp.pdf
auf Bestellung 5560 Stücke
Lieferzeit 21-28 Tag (e)
SIRA58ADP-T1-RE3
SIRA58ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA58
sira58adp.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)