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SIRA58ADP-T1-RE3

SIRA58ADP-T1-RE3 Vishay Siliconix

sira58adp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32.3A/109A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 20 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.14 EUR
6000+ 1.09 EUR
9000+ 1.04 EUR
Mindestbestellmenge: 3000
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Technische Details SIRA58ADP-T1-RE3 Vishay Siliconix

Description: MOSFET N-CH 40V 32.3A/109A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc), Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 56.8W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 20 V.

Weitere Produktangebote SIRA58ADP-T1-RE3 nach Preis ab 1.21 EUR bis 2.94 EUR

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SIRA58ADP-T1-RE3 SIRA58ADP-T1-RE3 Hersteller : Vishay Siliconix sira58adp.pdf Description: MOSFET N-CH 40V 32.3A/109A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 20 V
auf Bestellung 10570 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.76 EUR
12+ 2.25 EUR
100+ 1.75 EUR
500+ 1.49 EUR
1000+ 1.21 EUR
Mindestbestellmenge: 10
SIRA58ADP-T1-RE3 SIRA58ADP-T1-RE3 Hersteller : Vishay Semiconductors VISH_S_A0006502532_1-2569670.pdf MOSFET 40V Vds 20/-16V Vgs PowerPAK SO-8
auf Bestellung 3835 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+2.94 EUR
20+ 2.65 EUR
100+ 2.06 EUR
500+ 1.7 EUR
Mindestbestellmenge: 18
SIRA58ADP-T1-RE3 Hersteller : VISHAY sira58adp.pdf SIRA58ADP-T1-RE3 SMD N channel transistors
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