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SIRA64DP-T1-RE3

SIRA64DP-T1-RE3 Vishay / Siliconix

sira64dp.pdf Hersteller: Vishay / Siliconix
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 39667 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.15 EUR
30+ 1.75 EUR
100+ 1.36 EUR
500+ 1.16 EUR
1000+ 0.94 EUR
3000+ 0.92 EUR
Mindestbestellmenge: 25
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Technische Details SIRA64DP-T1-RE3 Vishay / Siliconix

Description: MOSFET N-CH 30V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V, Power Dissipation (Max): 27.8W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V.

Weitere Produktangebote SIRA64DP-T1-RE3 nach Preis ab 1.1 EUR bis 2.42 EUR

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Preis ohne MwSt
SIRA64DP-T1-RE3 SIRA64DP-T1-RE3 Hersteller : Vishay Siliconix sira64dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V
auf Bestellung 6673 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.42 EUR
13+ 2.16 EUR
100+ 1.69 EUR
500+ 1.39 EUR
1000+ 1.1 EUR
Mindestbestellmenge: 11
SIRA64DP-T1-RE3 SIRA64DP-T1-RE3 Hersteller : Vishay Siliconix sira64dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V
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