SIRC18DP-T1-GE3 Vishay Semiconductors
auf Bestellung 48794 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.38 EUR |
| 18+ | 3.04 EUR |
| 100+ | 2.36 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.54 EUR |
| 3000+ | 1.43 EUR |
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Technische Details SIRC18DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 54.3W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V.
Weitere Produktangebote SIRC18DP-T1-GE3 nach Preis ab 1.6 EUR bis 3.54 EUR
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SIRC18DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 60A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V |
auf Bestellung 2718 Stücke: Lieferzeit 21-28 Tag (e) |
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SIRC18DP-T1-GE3 Produktcode: 165751 |
Transistoren > MOSFET N-CH |
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| SIRC18DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 250A Power dissipation: 34.7W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 1.54mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SIRC18DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIRC18DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SIRC18DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 60A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 250A Power dissipation: 34.7W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 1.54mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |