Produkte > VISHAY SILICONIX > SIS106DN-T1-GE3
SIS106DN-T1-GE3

SIS106DN-T1-GE3 Vishay Siliconix

sis106dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.8A/16A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SIS106DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 9.8A/16A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V, Power Dissipation (Max): 3.2W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V.

Weitere Produktangebote SIS106DN-T1-GE3 nach Preis ab 1.04 EUR bis 2.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SIS106DN-T1-GE3 SIS106DN-T1-GE3 Hersteller : Vishay / Siliconix sis106dn.pdf MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 26286 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
23+2.36 EUR
27+ 1.94 EUR
100+ 1.51 EUR
500+ 1.28 EUR
1000+ 1.04 EUR
Mindestbestellmenge: 23
SIS106DN-T1-GE3 SIS106DN-T1-GE3 Hersteller : Vishay Siliconix sis106dn.pdf Description: MOSFET N-CH 60V 9.8A/16A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
auf Bestellung 4890 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.39 EUR
14+ 1.97 EUR
100+ 1.53 EUR
500+ 1.3 EUR
1000+ 1.06 EUR
Mindestbestellmenge: 11
SIS106DN-T1-GE3 SIS106DN-T1-GE3 Hersteller : Vishay sis106dn.pdf Trans MOSFET N-CH 60V 9.8A 8-Pin PowerPAK 1212 EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
SIS106DN-T1-GE3 Hersteller : VISHAY sis106dn.pdf SIS106DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar