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SIS176LDN-T1-GE3

SIS176LDN-T1-GE3 Vishay Siliconix


sis176ldn.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.89 EUR
6000+ 0.85 EUR
9000+ 0.81 EUR
Mindestbestellmenge: 3000
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Technische Details SIS176LDN-T1-GE3 Vishay Siliconix

Description: N-CHANNEL 70 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc), Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V, Power Dissipation (Max): 3.6W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V.

Weitere Produktangebote SIS176LDN-T1-GE3 nach Preis ab 0.86 EUR bis 2.18 EUR

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SIS176LDN-T1-GE3 SIS176LDN-T1-GE3 Hersteller : Vishay Siliconix sis176ldn.pdf Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
auf Bestellung 19780 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
15+ 1.77 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 0.95 EUR
Mindestbestellmenge: 13
SIS176LDN-T1-GE3 SIS176LDN-T1-GE3 Hersteller : Vishay / Siliconix sis176ldn.pdf MOSFET N-CHANNEL 70-V (D-S)
auf Bestellung 43735 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.18 EUR
30+ 1.78 EUR
100+ 1.39 EUR
500+ 1.18 EUR
1000+ 0.96 EUR
3000+ 0.9 EUR
6000+ 0.86 EUR
Mindestbestellmenge: 24
SIS176LDN-T1-GE3 Hersteller : VISHAY sis176ldn.pdf SIS176LDN-T1-GE3 SMD N channel transistors
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