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SIS184DN-T1-GE3

SIS184DN-T1-GE3 Vishay Siliconix

sis184dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17.4A/65.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 65.3A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.52 EUR
6000+ 1.45 EUR
9000+ 1.38 EUR
Mindestbestellmenge: 3000
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Technische Details SIS184DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 17.4A/65.3A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 65.3A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V.

Weitere Produktangebote SIS184DN-T1-GE3 nach Preis ab 1.44 EUR bis 3.69 EUR

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Preis ohne MwSt
SIS184DN-T1-GE3 SIS184DN-T1-GE3 Hersteller : Vishay / Siliconix sis184dn.pdf MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 29811 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.43 EUR
19+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
3000+ 1.44 EUR
Mindestbestellmenge: 16
SIS184DN-T1-GE3 SIS184DN-T1-GE3 Hersteller : Vishay Siliconix sis184dn.pdf Description: MOSFET N-CH 60V 17.4A/65.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 65.3A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V
auf Bestellung 14940 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.69 EUR
10+ 3.02 EUR
100+ 2.35 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
Mindestbestellmenge: 8
SIS184DN-T1-GE3 Hersteller : VISHAY sis184dn.pdf SIS184DN-T1-GE3 SMD N channel transistors
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