SIS424DN-T1-GE3

SIS424DN-T1-GE3

SIS424DN-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET RECOMMENDED ALT 781-SIS410DN-T1-GE3
sis424dn-1764909.pdf
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Technische Details SIS424DN-T1-GE3

Description: MOSFET N-CH 20V 35A PPAK 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.7W (Ta), 39W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19.6A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Tape & Reel (TR), Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8.

Preis SIS424DN-T1-GE3 ab 0 EUR bis 0 EUR

SIS424DN-T1-GE3
SIS424DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
sis424dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen