SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET -30V Vds 25V Vgs PowerPAK 1212-8
sis427edn-1764293.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3041 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SIS427EDN-T1-GE3

Description: MOSFET P-CH 30V 50A 1212-8, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), Base Part Number: SIS427, Package / Case: PowerPAK® 1212-8, FET Type: P-Channel, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V, Vgs (Max): ±25V, Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 10.6mOhm @ 11A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SIS427EDN-T1-GE3 ab 0 EUR bis 0 EUR

SIS427EDN-T1-GE3
SIS427EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK1212-8
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS427
sis427edn.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIS427EDN-T1-GE3
SIS427EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A 1212-8
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SIS427
Package / Case: PowerPAK® 1212-8
FET Type: P-Channel
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
sis427edn.pdf
auf Bestellung 10430 Stücke
Lieferzeit 21-28 Tag (e)
SIS427EDN-T1-GE3
SIS427EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS427
sis427edn.pdf
auf Bestellung 5900 Stücke
Lieferzeit 21-28 Tag (e)