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SIS468DN-T1-GE3

SIS468DN-T1-GE3 Vishay Semiconductors


sis468dn.pdf Hersteller: Vishay Semiconductors
MOSFET 80V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 7500 Stücke:

Lieferzeit 842-856 Tag (e)
Anzahl Preis ohne MwSt
17+3.07 EUR
19+ 2.76 EUR
100+ 2.13 EUR
500+ 1.77 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 17
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Technische Details SIS468DN-T1-GE3 Vishay Semiconductors

Description: MOSFET N-CH 80V 30A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V.

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SIS468DN-T1-GE3
Produktcode: 148149
sis468dn.pdf IC > IC andere
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SIS468DN-T1-GE3 SIS468DN-T1-GE3 Hersteller : Vishay sis468dn.pdf Trans MOSFET N-CH 80V 30A 8-Pin PowerPAK 1212 EP T/R
Produkt ist nicht verfügbar
SIS468DN-T1-GE3 SIS468DN-T1-GE3 Hersteller : Vishay sis468dn.pdf Trans MOSFET N-CH 80V 30A 8-Pin PowerPAK 1212 EP T/R
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SIS468DN-T1-GE3 Hersteller : VISHAY sis468dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 29.2A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29.2A
Pulsed drain current: 60A
Power dissipation: 33.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIS468DN-T1-GE3 SIS468DN-T1-GE3 Hersteller : Vishay Siliconix sis468dn.pdf Description: MOSFET N-CH 80V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Produkt ist nicht verfügbar
SIS468DN-T1-GE3 SIS468DN-T1-GE3 Hersteller : Vishay Siliconix sis468dn.pdf Description: MOSFET N-CH 80V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Produkt ist nicht verfügbar
SIS468DN-T1-GE3 Hersteller : VISHAY sis468dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 29.2A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29.2A
Pulsed drain current: 60A
Power dissipation: 33.3W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar