SIS476DN-T1-GE3
SIS476DN-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 40A PPAK1212-8
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 807 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 807 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details SIS476DN-T1-GE3
Description: MOSFET N-CH 30V 40A 1212-8 PWR, Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SIS476, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V, Vgs (Max): +20V, -16V.
Preis SIS476DN-T1-GE3 ab 1.71 EUR bis 3.04 EUR
 Hersteller: Vishay Semiconductors MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
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auf Bestellung 11502 Stücke Lieferzeit 14-28 Tag (e) |
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SIS476DN-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212 T/R
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auf Bestellung 10 Stücke Lieferzeit 14-21 Tag (e) |
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SIS476DN-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212 T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 40A 1212-8 PWR Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIS476 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Vgs (Max): +20V, -16V
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auf Bestellung 84601 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK1212-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) Supplier Device Package: PowerPAK® 1212-8
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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