SIS476DN-T1-GE3

SIS476DN-T1-GE3

SIS476DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA

sis476dn.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 807 Stücke
Lieferzeit 21-28 Tag (e)

9+ 2.96 EUR
10+ 2.65 EUR
100+ 2.07 EUR
500+ 1.71 EUR

Technische Details SIS476DN-T1-GE3

Description: MOSFET N-CH 30V 40A 1212-8 PWR, Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SIS476, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V, Vgs (Max): +20V, -16V.

Preis SIS476DN-T1-GE3 ab 1.71 EUR bis 3.04 EUR

SIS476DN-T1-GE3
SIS476DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
VISH_S_A0001785332_1-2567490.pdf
auf Bestellung 11502 Stücke
Lieferzeit 14-28 Tag (e)
18+ 3.04 EUR
20+ 2.73 EUR
100+ 2.17 EUR
500+ 1.79 EUR
SIS476DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212 T/R
sis476dn.pdf sis476dn.pdf
auf Bestellung 10 Stücke
Lieferzeit 14-21 Tag (e)
SIS476DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212 T/R
sis476dn.pdf sis476dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS476DN-T1-GE3
SIS476DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A 1212-8 PWR
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIS476
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Vgs (Max): +20V, -16V
sis476dn.pdf
auf Bestellung 84601 Stücke
Lieferzeit 21-28 Tag (e)
SIS476DN-T1-GE3
SIS476DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® 1212-8
sis476dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen