SIS776DN-T1-GE3

SIS776DN-T1-GE3

SIS776DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Schottky, Metal Oxide

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Technische Details SIS776DN-T1-GE3

Description: MOSFET N-CH 30V 35A 1212-8, Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Power - Max: 52W, Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET N-Channel, Schottky, Metal Oxide.

Preis SIS776DN-T1-GE3 ab 0 EUR bis 0 EUR