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SIS888DN-T1-GE3

SIS888DN-T1-GE3 Vishay Siliconix

sis888dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 20.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V
auf Bestellung 2135 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.72 EUR
10+ 3.06 EUR
100+ 2.38 EUR
500+ 2.01 EUR
1000+ 1.64 EUR
Mindestbestellmenge: 7
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Technische Details SIS888DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 150V 20.2A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V.

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SIS888DN-T1-GE3 SIS888DN-T1-GE3 Hersteller : Vishay Semiconductors sis888dn.pdf MOSFET 150V Vds 20V Vgs PowerPAK 1212-8S
auf Bestellung 7121 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.8 EUR
17+ 3.12 EUR
100+ 2.44 EUR
500+ 2.06 EUR
1000+ 1.67 EUR
2500+ 1.61 EUR
6000+ 1.5 EUR
Mindestbestellmenge: 14
SIS888DN-T1-GE3 Hersteller : VISHAY sis888dn.pdf SIS888DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIS888DN-T1-GE3 SIS888DN-T1-GE3 Hersteller : Vishay Siliconix sis888dn.pdf Description: MOSFET N-CH 150V 20.2A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V
Produkt ist nicht verfügbar