SIS932EDN-T1-GE3 Vishay / Siliconix
auf Bestellung 17703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.4 EUR |
| 9000+ | 0.31 EUR |
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Technische Details SIS932EDN-T1-GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK 1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Ta), 23W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.
Weitere Produktangebote SIS932EDN-T1-GE3 nach Preis ab 0.37 EUR bis 1 EUR
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SIS932EDN-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 6A PPAK 1212Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
auf Bestellung 1063 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIS932EDN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6A 8-Pin PowerPAK 1212 EP T/R |
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| SIS932EDN-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A Gate charge: 14nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 40A Case: PowerPAK® 1212-8 Mounting: SMD Drain-source voltage: 30V Drain current: 6A On-state resistance: 26mΩ Type of transistor: N-MOSFET x2 Power dissipation: 14.8W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIS932EDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6A PPAK 1212 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
Produkt ist nicht verfügbar |
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| SIS932EDN-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A Gate charge: 14nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 40A Case: PowerPAK® 1212-8 Mounting: SMD Drain-source voltage: 30V Drain current: 6A On-state resistance: 26mΩ Type of transistor: N-MOSFET x2 Power dissipation: 14.8W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |