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SIS990DN-T1-GE3

SIS990DN-T1-GE3 Vishay Siliconix


sis990dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 12.1A PPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.87 EUR
6000+ 0.83 EUR
Mindestbestellmenge: 3000
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Technische Details SIS990DN-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 100V 12.1A PPAK1212, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 25W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 12.1A, Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V, Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.

Weitere Produktangebote SIS990DN-T1-GE3 nach Preis ab 0.85 EUR bis 2.15 EUR

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SIS990DN-T1-GE3 SIS990DN-T1-GE3 Hersteller : Vishay Siliconix sis990dn.pdf Description: MOSFET 2N-CH 100V 12.1A PPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Rds On (Max) @ Id, Vgs: 85mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 13969 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.11 EUR
16+ 1.72 EUR
100+ 1.34 EUR
500+ 1.14 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 13
SIS990DN-T1-GE3 SIS990DN-T1-GE3 Hersteller : Vishay Semiconductors sis990dn.pdf MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 18830 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.15 EUR
30+ 1.75 EUR
100+ 1.36 EUR
500+ 1.16 EUR
1000+ 0.94 EUR
3000+ 0.89 EUR
6000+ 0.85 EUR
Mindestbestellmenge: 25
SIS990DN-T1-GE3 SIS990DN-T1-GE3 Hersteller : Vishay / Siliconix sis990dn-348526.pdf MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 27791 Stücke:
Lieferzeit 14-28 Tag (e)
SIS990DN-T1-GE3 Hersteller : VISHAY sis990dn.pdf SIS990DN-T1-GE3 Multi channel transistors
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