SISA04DN-T1-GE3

SISA04DN-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212 T/R
sisa04dn.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 639 Stücke
Lieferzeit 14-21 Tag (e)

104+ 1.56 EUR
109+ 1.44 EUR
110+ 1.37 EUR
134+ 1.08 EUR
250+ 1.02 EUR
500+ 0.81 EUR

Technische Details SISA04DN-T1-GE3

Description: MOSFET N-CH 30V 40A PPAK1212-8, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs (Max): +20V, -16V, Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

Preis SISA04DN-T1-GE3 ab 0.81 EUR bis 3.22 EUR

SISA04DN-T1-GE3
SISA04DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET For New Design See: 78-SISHA04DN-T1-GE3
sisa04dn-1761615.pdf
auf Bestellung 4141 Stücke
Lieferzeit 14-28 Tag (e)
17+ 3.22 EUR
19+ 2.89 EUR
100+ 2.25 EUR
500+ 1.86 EUR
SISA04DN-T1-GE3
SISA04DN-T1-GE3
Hersteller: VISHAY
Description: VISHAY - SISA04DN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.0018 ohm, PowerPAK 1212, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 40
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 52
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0018
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.1
SVHC: Lead (19-Jan-2021)
VISH-S-A0001798660-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
5126 Stücke
SISA04DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK 1212 T/R
sisa04dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISA04DN-T1-GE3
SISA04DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
sisa04dn.pdf
auf Bestellung 4911 Stücke
Lieferzeit 21-28 Tag (e)
SISA04DN-T1-GE3
SISA04DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
sisa04dn.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)