SISA12ADN-T1-GE3

SISA12ADN-T1-GE3

Hersteller: VISHAY
Material: SISA12ADN-T1-GE3 SMD N channel transistors
sisa12adn.pdf
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Technische Details SISA12ADN-T1-GE3

Description: MOSFET N-CH 30V 25A PPAK1212-8, Base Part Number: SISA12, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.5W (Ta), 28W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Drain to Source Voltage (Vdss): 30V.

Preis SISA12ADN-T1-GE3 ab 0 EUR bis 0 EUR

SISA12ADN-T1-GE3
SISA12ADN-T1-GE3
Hersteller: VISHAY
Description: VISHAY - SISA12ADN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 25 A, 0.0032 ohm, PowerPAK 1212, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 25
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 28
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0032
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.1
SVHC: Lead (19-Jan-2021)
VISH-S-A0000765273-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
5532 Stücke
SISA12ADN-T1-GE3
SISA12ADN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212 EP T/R
sisa12adn.pdf
3000 Stücke
SISA12ADN-T1-GE3
Hersteller: VISHAY
Material: SISA12ADN-T1-GE3 SMD N channel transistors
sisa12adn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISA12ADN-T1-GE3
SISA12ADN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET For New Design See: 78-SISHA12ADN-T1-GE3
sisa12adn-1764439.pdf
auf Bestellung 4296 Stücke
Lieferzeit 14-28 Tag (e)
SISA12ADN-T1-GE3
SISA12ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A PPAK1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SISA12
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
sisa12adn.pdf
auf Bestellung 3175 Stücke
Lieferzeit 21-28 Tag (e)
SISA12ADN-T1-GE3
SISA12ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A PPAK1212-8
Base Part Number: SISA12
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 30V
sisa12adn.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)