SISA14DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.39 EUR |
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Technische Details SISA14DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V.
Weitere Produktangebote SISA14DN-T1-GE3 nach Preis ab 0.37 EUR bis 1.27 EUR
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SISA14DN-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs For New Design See: 78-SISHA14DN-T1-GE3 |
auf Bestellung 93063 Stücke: Lieferzeit 10-14 Tag (e) |
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SISA14DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 20A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V |
auf Bestellung 4728 Stücke: Lieferzeit 10-14 Tag (e) |
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SISA14DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 20A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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SISA14DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 20A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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SISA14DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 20A 8-Pin PowerPAK 1212 EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SISA14DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 20A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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| SISA14DN-T1-GE3 | Hersteller : VISHAY |
SISA14DN-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |