SISA14DN-T1-GE3

SISA14DN-T1-GE3

SISA14DN-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET For New Design See: 78-SISHA14DN-T1-GE3
sisa14dn-1764306.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4770 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SISA14DN-T1-GE3

Description: MOSFET N-CH 30V 20A 1212-8, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V, Vgs (Max): +20V, -16V, Base Part Number: SISA14, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 30V, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Packaging: Tape & Reel (TR).

Preis SISA14DN-T1-GE3 ab 0 EUR bis 0 EUR

SISA14DN-T1-GE3
SISA14DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V
Vgs (Max): +20V, -16V
Base Part Number: SISA14
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
sisa14dn.pdf
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
SISA14DN-T1-GE3
SISA14DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SISA14
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
sisa14dn.pdf
auf Bestellung 12049 Stücke
Lieferzeit 21-28 Tag (e)