SISA14DN-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4770 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 4770 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SISA14DN-T1-GE3
Description: MOSFET N-CH 30V 20A 1212-8, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V, Vgs (Max): +20V, -16V, Base Part Number: SISA14, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 30V, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Packaging: Tape & Reel (TR).
Preis SISA14DN-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 20A 1212-8 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V Vgs (Max): +20V, -16V Base Part Number: SISA14 Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 30V Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tape & Reel (TR) 
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auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 20A 1212-8 Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SISA14 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
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auf Bestellung 12049 Stücke Lieferzeit 21-28 Tag (e) |
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