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SiSA96DN-T1-GE3

SiSA96DN-T1-GE3 Vishay Siliconix

sisa96dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
6000+ 0.33 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 3000
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Technische Details SiSA96DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 16A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Power Dissipation (Max): 26.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V.

Weitere Produktangebote SiSA96DN-T1-GE3 nach Preis ab 0.38 EUR bis 1.08 EUR

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SiSA96DN-T1-GE3 SiSA96DN-T1-GE3 Hersteller : Vishay Siliconix sisa96dn.pdf Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
auf Bestellung 13262 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
30+ 0.87 EUR
100+ 0.61 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 26
SiSA96DN-T1-GE3 SiSA96DN-T1-GE3 Hersteller : Vishay / Siliconix sisa96dn-1766176.pdf MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 24732 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
49+1.08 EUR
57+ 0.92 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.42 EUR
3000+ 0.38 EUR
Mindestbestellmenge: 49
SiSA96DN-T1-GE3 Hersteller : VISHAY sisa96dn.pdf SISA96DN-T1-GE3 SMD N channel transistors
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SISA96DN-T1-GE3 SISA96DN-T1-GE3 Hersteller : Vishay sisa96dn.pdf Trans MOSFET N-CH 30V 16A 8-Pin PowerPAK 1212 EP T/R
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