SISH101DN-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3683 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 3683 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SISH101DN-T1-GE3
Description: MOSFET P-CH 30V 16.9A/35A PPAK, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V, Vgs (Max): ±25V, Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8SH, Package / Case: PowerPAK® 1212-8SH, Manufacturer: Vishay Siliconix, Base Part Number: SISH101.
Preis SISH101DN-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V POWERPAK 1212 Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc) 
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auf Bestellung 5610 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 16.9A/35A PPAK Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH Manufacturer: Vishay Siliconix Base Part Number: SISH101
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 30V 16.9A/35A PPAK Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH Manufacturer: Vishay Siliconix Base Part Number: SISH101
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auf Bestellung 7405 Stücke Lieferzeit 21-28 Tag (e) |
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