SISH101DN-T1-GE3

SISH101DN-T1-GE3

SISH101DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH
VISH_S_A0010924887_1-2571289.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3683 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SISH101DN-T1-GE3

Description: MOSFET P-CH 30V 16.9A/35A PPAK, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V, Vgs (Max): ±25V, Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8SH, Package / Case: PowerPAK® 1212-8SH, Manufacturer: Vishay Siliconix, Base Part Number: SISH101.

Preis SISH101DN-T1-GE3 ab 0 EUR bis 0 EUR

SISH101DN-T1-GE3
SISH101DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V POWERPAK 1212
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc)
sish101dn.pdf
auf Bestellung 5610 Stücke
Lieferzeit 21-28 Tag (e)
SISH101DN-T1-GE3
SISH101DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16.9A/35A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Manufacturer: Vishay Siliconix
Base Part Number: SISH101
sish101dn.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SISH101DN-T1-GE3
SISH101DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 16.9A/35A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Manufacturer: Vishay Siliconix
Base Part Number: SISH101
sish101dn.pdf
auf Bestellung 7405 Stücke
Lieferzeit 21-28 Tag (e)