SISH108DN-T1-GE3 Vishay Semiconductors
auf Bestellung 5175 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 1.62 EUR |
| 37+ | 1.42 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.73 EUR |
| 9000+ | 0.72 EUR |
| 24000+ | 0.7 EUR |
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Technische Details SISH108DN-T1-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W, Mounting: SMD, Case: PowerPAK® 1212-8, Power dissipation: 2W, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 30nC, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±16V, Pulsed drain current: 60A, Drain-source voltage: 20V, Drain current: 17.6A, On-state resistance: 6.1mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SISH108DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SISH108DN-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 20V 14A PPAK1212-8SH |
auf Bestellung 3780 Stücke: Lieferzeit 21-28 Tag (e) |
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SISH108DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 14A PPAK1212-8SH |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SISH108DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 2W Kind of package: reel; tape Polarisation: unipolar Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 60A Drain-source voltage: 20V Drain current: 17.6A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SISH108DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W Mounting: SMD Case: PowerPAK® 1212-8 Power dissipation: 2W Kind of package: reel; tape Polarisation: unipolar Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 60A Drain-source voltage: 20V Drain current: 17.6A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |