SISH116DN-T1-GE3

SISH116DN-T1-GE3

SISH116DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
VISH_S_A0010924791_1-2571646.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4249 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SISH116DN-T1-GE3

Description: MOSFET N-CH 40V PPAK 1212-8SH, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, Vgs (Max): ±20V, Power Dissipation (Max): 1.5W (Ta), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8SH, Package / Case: PowerPAK® 1212-8SH, Base Part Number: SISH11.

Preis SISH116DN-T1-GE3 ab 0 EUR bis 0 EUR

SISH116DN-T1-GE3
SISH116DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V PPAK 1212-8SH
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH11
sish116dn.pdf
auf Bestellung 5998 Stücke
Lieferzeit 21-28 Tag (e)
SISH116DN-T1-GE3
SISH116DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V PPAK 1212-8SH
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH11
sish116dn.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)