SISH116DN-T1-GE3 Vishay Semiconductors
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.69 EUR |
| 10+ | 2.22 EUR |
| 100+ | 1.78 EUR |
| 250+ | 1.64 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.27 EUR |
| 3000+ | 1.18 EUR |
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Technische Details SISH116DN-T1-GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 13.1A, Pulsed drain current: 60A, Power dissipation: 2W, Case: PowerPAK® 1212-8, Gate-source voltage: ±20V, On-state resistance: 10mΩ, Mounting: SMD, Gate charge: 23nC, Kind of package: reel; tape, Kind of channel: enhanced.
Weitere Produktangebote SISH116DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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SISH116DN-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 40V PPAK 1212-8SH |
auf Bestellung 5998 Stücke: Lieferzeit 10-14 Tag (e) |
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SISH116DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V PPAK 1212-8SH |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SISH116DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 13.1A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SISH116DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 13.1A Pulsed drain current: 60A Power dissipation: 2W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |