SISH617DN-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 8713 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 8713 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SISH617DN-T1-GE3
Description: MOSFET P-CHAN 30V POWERPAK 1212-, FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V, Vgs (Max): ±25V, Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), Base Part Number: SISH61, Package / Case: PowerPAK® 1212-8SH, Supplier Device Package: PowerPAK® 1212-8SH, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ).
Preis SISH617DN-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET P-CHAN 30V POWERPAK 1212- FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Base Part Number: SISH61 Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) 
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auf Bestellung 5625 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET P-CHAN 30V POWERPAK 1212- Base Part Number: SISH61 Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT)
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auf Bestellung 5410 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET P-CHAN 30V POWERPAK 1212- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 35A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V Base Part Number: SISH61
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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