SISH892BDN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
auf Bestellung 1069 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 2.03 EUR |
| 15+ | 1.77 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.87 EUR |
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Produktbewertung abgeben
Technische Details SISH892BDN-T1-GE3 Vishay Siliconix
Description: VISHAY - SISH892BDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 20 A, 0.0253 ohm, PowerPAK 1212, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 20A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Verlustleistung Pd: 29W, Gate-Source-Schwellenspannung, max.: 2.4V, euEccn: NLR, Verlustleistung: 29W, Bauform - Transistor: PowerPAK 1212, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0253ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0253ohm, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote SISH892BDN-T1-GE3 nach Preis ab 0.78 EUR bis 2.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SISH892BDN-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET 100V N-CHANNEL (D-S) |
auf Bestellung 37731 Stücke: Lieferzeit 14-28 Tag (e) |
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SISH892BDN-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SISH892BDN-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 20 A, 0.0253 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 29W Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 29W Bauform - Transistor: PowerPAK 1212 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0253ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0253ohm SVHC: Lead (10-Jun-2022) |
auf Bestellung 22793 Stücke: Lieferzeit 14-21 Tag (e) |
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SISH892BDN-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 6.8A 8-Pin PowerPAK 1212-HS T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SISH892BDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16A; Idm: 40A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 18.6W Polarisation: unipolar Gate charge: 26.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 100V Drain current: 16A On-state resistance: 34.7mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SISH892BDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V Power Dissipation (Max): 3.4W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8DC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V |
Produkt ist nicht verfügbar |
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| SISH892BDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16A; Idm: 40A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 18.6W Polarisation: unipolar Gate charge: 26.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 100V Drain current: 16A On-state resistance: 34.7mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |