SISS12DN-T1-GE3

SISS12DN-T1-GE3

SISS12DN-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 40V 37.5A 8-Pin PowerPAK 1212-S EP T/R
siss12dn.pdf
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Technische Details SISS12DN-T1-GE3

Description: MOSFET N-CHAN 40V POWERPAK 1212-, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Base Part Number: SISS12, Package / Case: PowerPAK® 1212-8S, Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3), Mounting Type: Surface Mount, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V, Vgs (Max): +20V, -16V, Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc), Drain to Source Voltage (Vdss): 40V.

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SISS12DN-T1-GE3
SISS12DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 40V Vds 20V Vgs PowerPAK 1212-8S
siss12dn-1761588.pdf
auf Bestellung 5927 Stücke
Lieferzeit 14-28 Tag (e)
SISS12DN-T1-GE3
SISS12DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V POWERPAK 1212-
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SISS12
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4270pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 40V
siss12dn.pdf
auf Bestellung 5690 Stücke
Lieferzeit 21-28 Tag (e)
SISS12DN-T1-GE3
SISS12DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 37.5A/60A PPAK
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
siss12dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS12DN-T1-GE3
SISS12DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 37.5A/60A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
siss12dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen