SISS22DN-T1-GE3

SISS22DN-T1-GE3

Hersteller: VISHAY
MOSFET N-CH 60V PPAK 1212-8S Trans. SISS22DN-T1-GE3 PPAK1212-8S TSISS22dn
Anzahl je Verpackung: 10 Stücke

siss22dn.pdf siss22dn.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 10 Stücke
Lieferzeit 7-14 Tag (e)
10+ 4.33 EUR

Technische Details SISS22DN-T1-GE3

Description: MOSFET N-CH 60V 25A/90.6A PPAK, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3), Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V, Vgs(th) (Max) @ Id: 3.6V @ 250µA, Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Base Part Number: SISS22, Package / Case: PowerPAK® 1212-8S.

Preis SISS22DN-T1-GE3 ab 4.33 EUR bis 4.33 EUR

SISS22DN-T1-GE3
SISS22DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 60V 25A 8-Pin PowerPAK 1212-S T/R
siss22dn.pdf
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SISS22DN-T1-GE3
SISS22DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
siss22dn-1766738.pdf
auf Bestellung 5930 Stücke
Lieferzeit 14-28 Tag (e)
SISS22DN-T1-GE3
SISS22DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V PPAK 1212-8S
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
siss22dn.pdf
auf Bestellung 5825 Stücke
Lieferzeit 21-28 Tag (e)
SISS22DN-T1-GE3
SISS22DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A/90.6A PPAK
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Base Part Number: SISS22
Package / Case: PowerPAK® 1212-8S
siss22dn.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SISS22DN-T1-GE3
SISS22DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A/90.6A PPAK
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V
Base Part Number: SISS22
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Vgs (Max): ±20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
siss22dn.pdf
auf Bestellung 4067 Stücke
Lieferzeit 21-28 Tag (e)