SISS22DN-T1-GE3
SISS22DN-T1-GE3
Hersteller: VISHAYMOSFET N-CH 60V PPAK 1212-8S Trans. SISS22DN-T1-GE3 PPAK1212-8S TSISS22dn
Anzahl je Verpackung: 10 Stücke
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 10 Stücke
Lieferzeit 7-14 Tag (e)
auf Bestellung 10 Stücke
Lieferzeit 7-14 Tag (e)
Technische Details SISS22DN-T1-GE3
Description: MOSFET N-CH 60V 25A/90.6A PPAK, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3), Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V, Vgs(th) (Max) @ Id: 3.6V @ 250µA, Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Base Part Number: SISS22, Package / Case: PowerPAK® 1212-8S.
Preis SISS22DN-T1-GE3 ab 4.33 EUR bis 4.33 EUR
 Hersteller: Vishay Trans MOSFET N-CH 60V 25A 8-Pin PowerPAK 1212-S T/R
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 Hersteller: Vishay Semiconductors MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
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auf Bestellung 5930 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V PPAK 1212-8S Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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auf Bestellung 5825 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 25A/90.6A PPAK Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3) Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Base Part Number: SISS22 Package / Case: PowerPAK® 1212-8S
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auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 25A/90.6A PPAK Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V Base Part Number: SISS22 Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3) Vgs (Max): ±20V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix
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auf Bestellung 4067 Stücke Lieferzeit 21-28 Tag (e) |
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