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SISS26DN-T1-GE3

SISS26DN-T1-GE3 Vishay Siliconix


siss26dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.61 EUR
6000+ 1.53 EUR
9000+ 1.46 EUR
Mindestbestellmenge: 3000
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Technische Details SISS26DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 60A PPAK1212-8S, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V.

Weitere Produktangebote SISS26DN-T1-GE3 nach Preis ab 1.54 EUR bis 3.93 EUR

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SISS26DN-T1-GE3 SISS26DN-T1-GE3 Hersteller : Vishay Siliconix siss26dn.pdf Description: MOSFET N-CH 60V 60A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
auf Bestellung 13489 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.9 EUR
10+ 3.18 EUR
100+ 2.47 EUR
500+ 2.1 EUR
1000+ 1.71 EUR
Mindestbestellmenge: 7
SISS26DN-T1-GE3 SISS26DN-T1-GE3 Hersteller : Vishay / Siliconix siss26dn.pdf MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
auf Bestellung 8767 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.93 EUR
17+ 3.22 EUR
100+ 2.51 EUR
500+ 2.11 EUR
1000+ 1.72 EUR
3000+ 1.62 EUR
6000+ 1.54 EUR
Mindestbestellmenge: 14
SISS26DN-T1-GE3 Hersteller : VISHAY siss26dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS26DN-T1-GE3 Hersteller : VISHAY siss26dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 60A
Produkt ist nicht verfügbar