SISS27DN-T1-GE3

SISS27DN-T1-GE3

SISS27DN-T1-GE3

Hersteller: Vishay
Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK 1212-S T/R
siss27dn.pdf
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Technische Details SISS27DN-T1-GE3

Description: MOSFET P-CH 30V 50A PPAK 1212-8S, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Base Part Number: SISS27, Package / Case: PowerPAK® 1212-8S, Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V.

Preis SISS27DN-T1-GE3 ab 0 EUR bis 0 EUR

SISS27DN-T1-GE3
SISS27DN-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
siss27dn-254076.pdf
auf Bestellung 2244 Stücke
Lieferzeit 14-28 Tag (e)
SISS27DN-T1-GE3
SISS27DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK 1212-8S
Base Part Number: SISS27
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
siss27dn.pdf
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
SISS27DN-T1-GE3
SISS27DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK 1212-8S
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Base Part Number: SISS27
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
siss27dn.pdf
auf Bestellung 10561 Stücke
Lieferzeit 21-28 Tag (e)
SISS27DN-T1-GE3
SISS27DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK 1212-8S
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
Base Part Number: SISS27
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
siss27dn.pdf
auf Bestellung 11810 Stücke
Lieferzeit 21-28 Tag (e)