SISS46DN-T1-GE3

SISS46DN-T1-GE3

SISS46DN-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 100V 12.5A 8-Pin PowerPAK 1212-S T/R
siss46dn.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

Technische Details SISS46DN-T1-GE3

Description: MOSFET N-CH 100V PPAK 1212-8S, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 50V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V, Vgs(th) (Max) @ Id: 3.4V @ 250µA, Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Base Part Number: SISS46, Package / Case: PowerPAK® 1212-8S, Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3), Mounting Type: Surface Mount.

Preis SISS46DN-T1-GE3 ab 0 EUR bis 0 EUR

SISS46DN-T1-GE3
SISS46DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S
siss46dn-1766556.pdf
auf Bestellung 11994 Stücke
Lieferzeit 14-28 Tag (e)
SISS46DN-T1-GE3
SISS46DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V PPAK 1212-8S
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SISS46
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
siss46dn.pdf
auf Bestellung 5990 Stücke
Lieferzeit 21-28 Tag (e)
SISS46DN-T1-GE3
SISS46DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12.5/45.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
siss46dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS46DN-T1-GE3
SISS46DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12.5/45.3A PPAK
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
siss46dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen