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SISS50DN-T1-GE3

SISS50DN-T1-GE3 Vishay Siliconix

siss50dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 29.7A/108A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
auf Bestellung 11980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.84 EUR
6000+ 0.8 EUR
9000+ 0.76 EUR
Mindestbestellmenge: 3000
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Technische Details SISS50DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 45V 29.7A/108A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 108A (Tc), Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V.

Weitere Produktangebote SISS50DN-T1-GE3 nach Preis ab 0.84 EUR bis 2.06 EUR

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SISS50DN-T1-GE3 SISS50DN-T1-GE3 Hersteller : Vishay Siliconix siss50dn.pdf Description: MOSFET N-CH 45V 29.7A/108A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
auf Bestellung 11980 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
16+ 1.66 EUR
100+ 1.29 EUR
500+ 1.1 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
SISS50DN-T1-GE3 SISS50DN-T1-GE3 Hersteller : Vishay / Siliconix siss50dn.pdf MOSFET 45-V (D-S) MOSFET N-CHANNEL PowerPAK
auf Bestellung 43032 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.06 EUR
32+ 1.67 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
3000+ 0.85 EUR
6000+ 0.84 EUR
Mindestbestellmenge: 26
SISS50DN-T1-GE3 Hersteller : VISHAY siss50dn.pdf SISS50DN-T1-GE3 SMD N channel transistors
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