SISS94DN-T1-GE3 Vishay Semiconductors
auf Bestellung 40039 Stücke:
Lieferzeit 1348-1362 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.1 EUR |
| 30+ | 1.74 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 0.99 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SISS94DN-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V, Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V.
Weitere Produktangebote SISS94DN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SISS94DN-T1-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; ThunderFET; unipolar; 200V; 15.6A; Idm: 25A Case: PowerPAK® 1212-8 Mounting: SMD Power dissipation: 42.1W Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape On-state resistance: 78mΩ Drain current: 15.6A Gate charge: 21nC Technology: ThunderFET; TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 200V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
SISS94DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
|
SISS94DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.4A/19.5A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 19.5A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 5.4A, 10V Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V |
Produkt ist nicht verfügbar |
|
| SISS94DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; ThunderFET; unipolar; 200V; 15.6A; Idm: 25A Case: PowerPAK® 1212-8 Mounting: SMD Power dissipation: 42.1W Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape On-state resistance: 78mΩ Drain current: 15.6A Gate charge: 21nC Technology: ThunderFET; TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 200V |
Produkt ist nicht verfügbar |