SIUD401ED-T1-GE3

SIUD401ED-T1-GE3

SIUD401ED-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET -30V Vds; +/-12V Vgs PowerPAK 0806
VISH_S_A0011414667_1-2571930.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 4271 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SIUD401ED-T1-GE3

Description: MOSFET P-CH 30V 500MA PPAK 0806, Manufacturer: Vishay Siliconix, Vgs (Max): ±12V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Package / Case: PowerPAK® 0806, Supplier Device Package: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.25W (Ta), Base Part Number: SIUD401, Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V, Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

Preis SIUD401ED-T1-GE3 ab 0 EUR bis 0 EUR

SIUD401ED-T1-GE3
SIUD401ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 500MA PPAK 0806
Manufacturer: Vishay Siliconix
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Base Part Number: SIUD401
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V
Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
siud401ed.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIUD401ED-T1-GE3
SIUD401ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 500MA PPAK 0806
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIUD401
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 15V
Vgs (Max): ±12V
siud401ed.pdf
auf Bestellung 3570 Stücke
Lieferzeit 21-28 Tag (e)