Produkte > VISHAY SILICONIX > SiUD403ED-T1-GE3
SiUD403ED-T1-GE3

SiUD403ED-T1-GE3 Vishay Siliconix


siud403ed.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.19 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SiUD403ED-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 500MA PPAK 0806, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 0806, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V.

Weitere Produktangebote SiUD403ED-T1-GE3 nach Preis ab 0.16 EUR bis 0.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SiUD403ED-T1-GE3 SiUD403ED-T1-GE3 Hersteller : Vishay / Siliconix siud403ed.pdf MOSFET -20V Vds 8V Vgs PowerPAK 0806
auf Bestellung 26850 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
64+0.82 EUR
87+ 0.6 EUR
184+ 0.28 EUR
1000+ 0.22 EUR
3000+ 0.18 EUR
9000+ 0.17 EUR
24000+ 0.16 EUR
Mindestbestellmenge: 64
SiUD403ED-T1-GE3 SiUD403ED-T1-GE3 Hersteller : Vishay Siliconix siud403ed.pdf Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
auf Bestellung 11653 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
42+ 0.63 EUR
100+ 0.32 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 30
SIUD403ED-T1-GE3 SIUD403ED-T1-GE3 Hersteller : Vishay siud403ed.pdf Trans MOSFET P-CH 20V 0.5A 3-Pin PowerPAK T/R
Produkt ist nicht verfügbar
SiUD403ED-T1-GE3 Hersteller : VISHAY siud403ed.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -500mA
On-state resistance: 4.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 1.7nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.8A
Mounting: SMD
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SiUD403ED-T1-GE3 Hersteller : VISHAY siud403ed.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -500mA
On-state resistance: 4.4Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 1.7nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.8A
Mounting: SMD
Produkt ist nicht verfügbar