SiUD403ED-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
6000+ | 0.19 EUR |
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Technische Details SiUD403ED-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerPAK® 0806, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V.
Weitere Produktangebote SiUD403ED-T1-GE3 nach Preis ab 0.16 EUR bis 0.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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SiUD403ED-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET -20V Vds 8V Vgs PowerPAK 0806 |
auf Bestellung 26850 Stücke: Lieferzeit 14-28 Tag (e) |
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SiUD403ED-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 500MA PPAK 0806 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V |
auf Bestellung 11653 Stücke: Lieferzeit 21-28 Tag (e) |
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SIUD403ED-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 20V 0.5A 3-Pin PowerPAK T/R |
Produkt ist nicht verfügbar |
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SiUD403ED-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Kind of package: reel; tape Drain-source voltage: -20V Drain current: -500mA On-state resistance: 4.4Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Mounting: SMD Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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SiUD403ED-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Kind of package: reel; tape Drain-source voltage: -20V Drain current: -500mA On-state resistance: 4.4Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Mounting: SMD |
Produkt ist nicht verfügbar |