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SIUD406ED-T1-GE3

SIUD406ED-T1-GE3 Vishay Siliconix

siud406ed.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.46Ohm @ 200mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
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Technische Details SIUD406ED-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 500MA PPAK 0806, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 0806, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.46Ohm @ 200mA, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: PowerPAK® 0806, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V.

Weitere Produktangebote SIUD406ED-T1-GE3 nach Preis ab 0.18 EUR bis 1.07 EUR

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SIUD406ED-T1-GE3 SIUD406ED-T1-GE3 Hersteller : Vishay Semiconductors siud406ed.pdf MOSFET 30V Vds; 8V Vgs PowerPAK 0806
auf Bestellung 12682 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
50+1.04 EUR
71+ 0.74 EUR
158+ 0.33 EUR
1000+ 0.26 EUR
3000+ 0.22 EUR
9000+ 0.2 EUR
24000+ 0.18 EUR
Mindestbestellmenge: 50
SIUD406ED-T1-GE3 SIUD406ED-T1-GE3 Hersteller : Vishay Siliconix siud406ed.pdf Description: MOSFET N-CH 30V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.46Ohm @ 200mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
auf Bestellung 16860 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
35+ 0.75 EUR
100+ 0.38 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
SIUD406ED-T1-GE3 Hersteller : VISHAY siud406ed.pdf SIUD406ED-T1-GE3 SMD N channel transistors
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