SIZ260DT-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 80V 8.9A 8PWRPAIR, Packaging: Cut Tape (CT), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.3W (Ta), 33W (Tc), FET Type: N-Channel, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V, Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-PowerPair® (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V.