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SIZ320DT-T1-GE3

SIZ320DT-T1-GE3 Vishay / Siliconix

siz320dt-1765168.pdf Hersteller: Vishay / Siliconix
MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3
auf Bestellung 3904 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
23+2.32 EUR
26+ 2.06 EUR
100+ 1.58 EUR
500+ 1.25 EUR
1000+ 1 EUR
3000+ 0.9 EUR
Mindestbestellmenge: 23
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Technische Details SIZ320DT-T1-GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 25V 30/40A 8POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 16.7W, 31W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V, Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-Power33 (3x3).

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SIZ320DT-T1-GE3 SIZ320DT-T1-GE3 Hersteller : Vishay Siliconix siz320dt.pdf Description: MOSFET 2N-CH 25V 30/40A 8POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.37 EUR
13+ 2.04 EUR
100+ 1.41 EUR
500+ 1.18 EUR
1000+ 1 EUR
Mindestbestellmenge: 11
SIZ320DT-T1-GE3 Hersteller : VISHAY siz320dt.pdf SIZ320DT-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIZ320DT-T1-GE3 SIZ320DT-T1-GE3 Hersteller : Vishay Siliconix siz320dt.pdf Description: MOSFET 2N-CH 25V 30/40A 8POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Produkt ist nicht verfügbar