SIZ342DT-T1-GE3
SIZ342DT-T1-GE3
Hersteller: Vishay SiliconixDescription: MOSFET DL N-CH 30V POWERPAIR3X3
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 953 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 953 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details SIZ342DT-T1-GE3
Description: MOSFET DL N-CH 30V POWERPAIR3X3, Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc), Base Part Number: SIZ342, Supplier Device Package: 8-Power33 (3x3), Drain to Source Voltage (Vdss): 30V, Package / Case: 8-PowerWDFN, FET Type: 2 N-Channel (Dual), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 3.6W, 4.3W, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V.
Preis SIZ342DT-T1-GE3 ab 1.35 EUR bis 2.4 EUR
 Hersteller: Vishay Semiconductors MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
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auf Bestellung 4266 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET DL N-CH 30V POWERPAIR3X3 Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Base Part Number: SIZ342 Supplier Device Package: 8-Power33 (3x3) Drain to Source Voltage (Vdss): 30V Package / Case: 8-PowerWDFN FET Type: 2 N-Channel (Dual) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.6W, 4.3W Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
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auf Bestellung 10471 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET DL N-CH 30V POWERPAIR3X3 Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ)
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