SIZ342DT-T1-GE3

SIZ342DT-T1-GE3

SIZ342DT-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR3X3
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)

siz342dt.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 953 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.34 EUR
13+ 2.09 EUR
100+ 1.63 EUR
500+ 1.35 EUR

Technische Details SIZ342DT-T1-GE3

Description: MOSFET DL N-CH 30V POWERPAIR3X3, Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc), Base Part Number: SIZ342, Supplier Device Package: 8-Power33 (3x3), Drain to Source Voltage (Vdss): 30V, Package / Case: 8-PowerWDFN, FET Type: 2 N-Channel (Dual), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 3.6W, 4.3W, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V.

Preis SIZ342DT-T1-GE3 ab 1.35 EUR bis 2.4 EUR

SIZ342DT-T1-GE3
SIZ342DT-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
siz342dt-1761554.pdf
auf Bestellung 4266 Stücke
Lieferzeit 14-28 Tag (e)
22+ 2.4 EUR
25+ 2.13 EUR
100+ 1.66 EUR
500+ 1.4 EUR
SIZ342DT-T1-GE3
SIZ342DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR3X3
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Base Part Number: SIZ342
Supplier Device Package: 8-Power33 (3x3)
Drain to Source Voltage (Vdss): 30V
Package / Case: 8-PowerWDFN
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W, 4.3W
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
siz342dt.pdf
auf Bestellung 10471 Stücke
Lieferzeit 21-28 Tag (e)
SIZ342DT-T1-GE3
SIZ342DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR3X3
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
siz342dt.pdf
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