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SIZ346DT-T1-GE3

SIZ346DT-T1-GE3 Vishay Siliconix


siz346dt.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 17A/30A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16W, 16.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.64 EUR
Mindestbestellmenge: 3000
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Technische Details SIZ346DT-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 30V 17A/30A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 16W, 16.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V, Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA, Supplier Device Package: 8-Power33 (3x3).

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SIZ346DT-T1-GE3 SIZ346DT-T1-GE3 Hersteller : Vishay Siliconix siz346dt.pdf Description: MOSFET 2N-CH 30V 17A/30A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16W, 16.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 3924 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.69 EUR
18+ 1.46 EUR
100+ 1.01 EUR
500+ 0.84 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 16
SIZ346DT-T1-GE3 SIZ346DT-T1-GE3 Hersteller : Vishay / Siliconix siz346dt.pdf MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
auf Bestellung 4258 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
31+1.69 EUR
36+ 1.47 EUR
100+ 1.02 EUR
500+ 0.85 EUR
1000+ 0.72 EUR
3000+ 0.64 EUR
6000+ 0.63 EUR
Mindestbestellmenge: 31
SIZ346DT-T1-GE3 SIZ346DT-T1-GE3 Hersteller : Vishay siz346dt.pdf Dual N-Channel 30 V (D-S) MOSFETs
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SIZ346DT-T1-GE3 Hersteller : VISHAY siz346dt.pdf SIZ346DT-T1-GE3 Multi channel transistors
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