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SIZ918DT-T1-GE3

SIZ918DT-T1-GE3 Vishay Siliconix


siz918dt.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 18000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.77 EUR
6000+ 1.71 EUR
9000+ 1.65 EUR
Mindestbestellmenge: 3000
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Technische Details SIZ918DT-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 30V 16A 8PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 29W, 100W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16A, 28A, Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.

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SIZ918DT-T1-GE3 SIZ918DT-T1-GE3 Hersteller : Vishay Siliconix siz918dt.pdf Description: MOSFET 2N-CH 30V 16A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 21962 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.27 EUR
100+ 2.6 EUR
500+ 2.2 EUR
1000+ 1.87 EUR
Mindestbestellmenge: 7
SIZ918DT-T1-GE3 SIZ918DT-T1-GE3 Hersteller : Vishay Semiconductors siz918dt-1764552.pdf MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
auf Bestellung 4736 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.03 EUR
15+ 3.59 EUR
100+ 2.89 EUR
500+ 2.41 EUR
1000+ 2.04 EUR
3000+ 1.92 EUR
6000+ 1.88 EUR
Mindestbestellmenge: 13
SIZ918DT-T1-GE3 Hersteller : VISHAY siz918dt.pdf SIZ918DT-T1-GE3 SMD N channel transistors
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SIZ918DT-T1-GE3 SIZ918DT-T1-GE3 Hersteller : Vishay siz918dt.pdf Trans MOSFET N-CH 30V 14.3A/26A 8-Pin PowerPAIR EP T/R
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