SIZ988DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2 N-CH 30V 8-POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 40W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIZ988DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2 N-CH 30V 8-POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20.2W, 40W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA, Supplier Device Package: 8-PowerPair®, Part Status: Active.
Weitere Produktangebote SIZ988DT-T1-GE3 nach Preis ab 1.23 EUR bis 3.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIZ988DT-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 |
auf Bestellung 4843 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||
|
|
SIZ988DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2 N-CH 30V 8-POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 40W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® Part Status: Active |
auf Bestellung 10248 Stücke: Lieferzeit 21-28 Tag (e) |
|