SIZ998DT-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 20A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 32.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Description: MOSFET 2N-CH 30V 20A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.2W, 32.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.46 EUR |
6000+ | 1.39 EUR |
9000+ | 1.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIZ998DT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ998DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0022 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 60A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 60A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0022ohm, Verlustleistung, p-Kanal: 32.9W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0022ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal + Schottky, Verlustleistung, n-Kanal: 32.9W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SIZ998DT-T1-GE3 nach Preis ab 1.48 EUR bis 3.59 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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SIZ998DT-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 20A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20.2W, 32.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
auf Bestellung 13250 Stücke: Lieferzeit 21-28 Tag (e) |
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SIZ998DT-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 |
auf Bestellung 3538 Stücke: Lieferzeit 14-28 Tag (e) |
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SIZ998DT-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIZ998DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0022 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 60A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0022ohm Verlustleistung, p-Kanal: 32.9W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0022ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 32.9W Betriebstemperatur, max.: 150°C |
auf Bestellung 11780 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ998DT-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIZ998DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0022 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 60A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0022ohm Verlustleistung, p-Kanal: 32.9W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0022ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 32.9W Betriebstemperatur, max.: 150°C |
auf Bestellung 11780 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ998DT-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIZ998DT-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 20A/60A 8-Pin PowerPAIR EP T/R |
Produkt ist nicht verfügbar |
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SIZ998DT-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20/60A Pulsed drain current: 90...130A Power dissipation: 20.2/32.9W On-state resistance: 10/3.8mΩ Mounting: SMD Gate charge: 18/44.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIZ998DT-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 20/60A Pulsed drain current: 90...130A Power dissipation: 20.2/32.9W On-state resistance: 10/3.8mΩ Mounting: SMD Gate charge: 18/44.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |