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SIZF360DT-T1-GE3

SIZF360DT-T1-GE3 Vishay Semiconductors


sizf360dt-1766550.pdf Hersteller: Vishay Semiconductors
MOSFET 30-V W/SCHOTTKY PowerPAIR 3 x 3FDC
auf Bestellung 5936 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.26 EUR
15+ 3.59 EUR
100+ 3.12 EUR
250+ 3.04 EUR
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Technische Details SIZF360DT-T1-GE3 Vishay Semiconductors

Description: MOSFET DL N-CH 30V PPAIR 3X3FDC, Packaging: Tape & Reel (TR), Package / Case: 6-PowerPair™, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Schottky, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V, Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 6-PowerPair™, Part Status: Active.

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SIZF360DT-T1-GE3 Hersteller : Vishay Siliconix sizf360dt.pdf Description: MOSFET DL N-CH 30V PPAIR 3X3FDC
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PowerPair™
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 21-28 Tag (e)
SIZF360DT-T1-GE3 Hersteller : Vishay Siliconix sizf360dt.pdf Description: MOSFET DL N-CH 30V PPAIR 3X3FDC
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PowerPair™
Part Status: Active
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