SM8S33AHE3S_A/I

SM8S33AHE3S_A/I Vishay General Semiconductor - Diodes Division


sm8s.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Technische Details SM8S33AHE3S_A/I Vishay General Semiconductor - Diodes Division

Description: TVS DIODE 33VWM DO218AB, Packaging: Tape & Reel (TR), Package / Case: DO-218AB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Current - Peak Pulse (10/1000µs): 124A, Voltage - Reverse Standoff (Typ): 33V, Supplier Device Package: DO-218AB, Unidirectional Channels: 1, Voltage - Breakdown (Min): 36.7V, Voltage - Clamping (Max) @ Ipp: 53.3V, Power - Peak Pulse: 6600W (6.6kW), Power Line Protection: No, Grade: Automotive, Qualification: AEC-Q101.