SM8S36-2HE3_A/I

SM8S36-2HE3_A/I Vishay General Semiconductor - Diodes Division


sm8s.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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Technische Details SM8S36-2HE3_A/I Vishay General Semiconductor - Diodes Division

Description: TVS DIODE 36VWM DO218AB, Packaging: Tape & Reel (TR), Package / Case: DO-218AB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Current - Peak Pulse (10/1000µs): 114A, Voltage - Reverse Standoff (Typ): 36V, Supplier Device Package: DO-218AB, Unidirectional Channels: 1, Voltage - Breakdown (Min): 40V, Voltage - Clamping (Max) @ Ipp: 58.1V, Power - Peak Pulse: 6600W (6.6kW), Power Line Protection: No, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.